C-3:Frontier of Nano-Materials Based on Advanced Plasma Technologies |
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Entry No | Presentation | Date | Award | Presenter Name | Affiliation | Paper Title | |||
Dec. 18 16:10 - 18:00 北九州国際会議場 イベントホール Kitakyushu International Conference Center Event Hall |
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2014 | C3-P18-001 | Dec. 18 | Hiroharu KAWASAKI | National Institute of Technology, Sasebo College | Two-dimensional Thin Film Preparation by Sputtering Deposition using Powder Targets | ||||
2201 | C3-P18-002 | Dec. 18 | Masanori SHINOHAR | National Institute of Technology, Sasebo College | Plasma enhanced chemical vapor deposition of amorphous carbon film with ether as a source molecule | ||||
2408 | C3-P18-003 | Dec. 18 | Masahiro SUGIYAMA | Graduate School of Integrated Science and Technology, Shizuoka Univ. | Rapid Desulfurization by MW Hydrogen Plasma of CVD-grown MoS2 Thin Film | ||||
2540 | C3-P18-004 | Dec. 18 | *B | Hiroaki YABE | Faculty of Engineering, Chiba Institute of Technology | Influences of O2 Gas Mixture on Properties of SiO:CH Films Deposited by PECVD | |||
2549 | C3-P18-005 | Dec. 18 | *M | Hisayuki HARA | Graduate School of Information Science and Electrical Engineering, Kyushu University | Effects of cluster-eliminating filter and gas velocity on SiH2 bond formation in a-Si:H films deposited by MHDPCVD method | |||
2555 | C3-P18-006 | Dec. 18 | *M | Shota ISHIKAWA | Nagoya University | Organic-matter removal treatment using atmospheric pressure microwave O2/CF4 plasma | |||
2669 | C3-P18-007 | Dec. 18 | *M | Kazuma TANAKA | Kyushu University | Effects of film deposition precursors on Raman intensity ratio ITA/ITO of a-Si:H thin films fabricated by plasma CVD method | |||
2672 | C3-P18-008 | Dec. 18 | *D | Sung hwa HWANG | Kyushu university | Size and Structure Control of Carbon Nano-particles Synthesized by Multi-hollow Discharge Plasma CVD Method | |||
2691 | C3-P18-009 | Dec. 18 | *M | Hiroshi OHTOMO | Kyushu University | Evaluation of potential distribution using a fine particle in Ar plasma | |||
2702 | C3-P18-010 | Dec. 18 | Masaharu Shiratani | Kyushu University | Spatial distribution of position fluctuation of optically trapped fine particle in Ar plasma | ||||
2782 | C3-P18-011 | Dec. 18 | *M | Yuki MIWA | Meijo University | Deposition of Si-doped DLC film by high power impulse magnetron sputtering | |||
2830 | C3-P18-012 | Dec. 18 | Kazunori KOGA | Kyushu University | Influence of Ar + CH4 Gas Flow Rate on Size of Carbon Nano-Particles Fabricated using High Pressure Multi-Hollow Discharge Plasma CVD Process | ||||
2908 | C3-P18-013 | Dec. 18 | Taisuke KAWAZOE | Interdisciplinary Graduate School of Engineering Science, Kyushu University | Optimum ozone CT value for agricultural sterilization by plasma | ||||
2911 | C3-P18-014 | Dec. 18 | *B | Hiroki TANO | Chiba Institute of Technology | Electrochromic Properties of WO3 Films Sputtered with Glancing-angle Deposition Scheme | |||
2913 | C3-P18-015 | Dec. 18 | *M | Muhammad AMINURUL HELMY | Graduate School of Engineering, Okayama University of Science | Influence of Gas Presence under Frequency Change on the Friction Abrasion Characteristics of ta-C:H Film Deposited by Cathodic Vacuum Arc Deposition Method | |||
2916 | C3-P18-016 | Dec. 18 | *M | Hiroyuki FUKUE | Graduate School of Engineering, Okayama University of Science | Development of DLC Deposition Technology using HF-HiPIMS Power Supply System | |||
2928 | C3-P18-017 | Dec. 18 | Jun-seok OH | Osaka City University | Spectroscopic Investigation of Pressure Gradient Sputtering System | ||||
2973 | C3-P18-018 | Dec. 18 | *M | Masayuki NAKAMURA | Meijo University | Gas phase diagnostics on TiN film formation process using high power impulse magnetron sputtering | |||
3003 | C3-P18-019 | Dec. 18 | Kosuke TAKENAKA | Joining and Welding Research Institute, Osaka University | Positive-current-bias Instability of Post-deposition Plasma-treated IGZO TFTs Prepared with Plasma-assisted Reactive Sputtering | ||||
3061 | C3-P18-020 | Dec. 18 | Yoshiki YAMAGUCHI | Department of Electronic Engineering, Tohoku University | Plasma functionalization of indium tin oxide for fabrication of transparent solar cell using few-layered transition metal dichalcogenide | ||||
3179 | C3-P18-021 | Dec. 18 | Tamiko OHSHIMA | National Institute of Technology, Sasebo College | Film deposition by mixed powder target using powders with different sputtering conditions |