D-3 : イオンビームを利用した革新的材料創製 Innovative Material Technologies Utilizing Ion Beams |
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Entry No | Keynote/ Invited |
Presentation | Date | Time to start |
Time to finish |
Award | Presenter Name | Affiliation | Paper Title |
Dec. 20 10:00 - 11:40 産業貿易センタービル 302室 / INDUSTRY & TRADE CENTER , Room 302 |
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Chair : 小林 知洋(理化学研究所) Tomohiro KOBAYASHI (RIKEN) |
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Opening | Dec. 20 | 10:00 | 10:05 | H. Amekura (NIMS) | |||||
2343 | Invited | D3-I20-001 | Dec. 20 | 10:05 | 10:35 | Takeshi OHSHIMA | National Institutes for Quantum and Radiological Science and Technology | Creation of Single Photon Sources in Wide Bandgap Semiconductors by Ion Irradiation | |
2638 | Invited | D3-I20-002 | Dec. 20 | 10:35 | 11:05 | Zengfeng DI | State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 | Synthesis of layer-tunable and bandgap-tunable graphene on Ni/Cu Bilayer substrate by ion implantation | |
2699 | D3-O20-003 | Dec. 20 | 11:05 | 11:20 | 岩瀬 彰宏 Akihiro IWASE |
大阪府立大学工学研究科マテリアル工学分野 Department of Materials Science, Osaka Prefecture University |
鉄ロジウム合金の磁性における50keV Arイオン照射と熱処理効果 Effect of 50keV Ar ion irradiation and thermal treatment on magnetic properties of FeRh thin films |
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2817 | D3-O20-004 | Dec. 20 | 11:20 | 11:35 | *M | 垣谷 健太 Kenta KAKITANI |
東京大学大学院工学系研究科 School of Engineering, The University of Tokyo |
アルゴンイオン照射したグラッシーカーボン基板と白金ナノ微粒子の界面 The Interface between Pt Nanoparticles and the Ar+ Irradiated Glassy Carbon Substrate |
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Discussion with invited speakers and organizers | Dec. 20 | 11:35 | 13:10 | ||||||
Dec. 20 14:00 - 17:40 産業貿易センタービル 302室 / INDUSTRY & TRADE CENTER , Room 302 |
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Chair : 岸本 直樹(物材機構) Naoki KISHIMOTO (NIMS) |
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2339 | Keynote | D3-K20-005 | Dec. 20 | 14:00 | 14:40 | 辻 博司 Hiroshi TSUJI |
京都大学工学研究科 Graduate School of Engineering, Kyoto Uniersity |
負イオン注入と高分子材料表面上での成体幹細胞の接着パターニング Negative-Ion Implantation and Adhesion Patterning of Adult-Stem Cells on Polymer Surfaces |
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Chair : |
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2351 | Invited | D3-I20-006 | Dec. 20 | 14:40 | 15:10 | Anders HALLEN | KTH Royal Institute of Technology | Recent advances in ion beam processing of SiC power electronic devices | |
2705 | Invited | D3-I20-007 | Dec. 20 | 15:10 | 15:40 | 鳴海 一雅 Kazumasa NARUMI |
国立研究開発法人量子科学技術研究開発機構 National Institutes for Quantum and Radiological Science and Technology |
QST高崎におけるクラスターイオンビームを用いたR&D Research and Development in Cluster-Ion Beams at QST/Takasaki |
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2549 | D3-O20-008 | Dec. 20 | 15:40 | 15:55 | 雨倉 宏 Hiroshi AMEKURA |
物材機構 National Institute for Materials Science (NIMS) |
C60クラスターイオン照射による埋め込まれた金属ナノ粒子の集団的形状楕円化 Shape elongation of embedded metal nanoparticles induced by C60 cluster ion irradiation |
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2120 | D3-O20-009 | Dec. 20 | 15:55 | 16:10 | *M | 福田 健吾 Kengo FUKUDA |
大阪府立大学大学院 Graduate School of Osaka Prefecture University |
高エネルギー金属イオンを照射したシリカガラスの磁気・光学特性評価 Magnetic and optical properties of silica glass implanted with energetic metal ions |
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Coffee Break | Dec. 20 | 16:10 | 16:40 | ||||||
Chair : 伊藤 久義(量子科学技術研究開発機構) Hisayoshi ITOH (QST) |
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2014 | Invited | D3-I20-010 | Dec. 20 | 16:40 | 17:10 | Shengqiang ZHOU | Helmholtz-Zentrum Dresden-Rossendorf | Ion implantation + sub-second annealing: a route towards hyperdoped semiconductors | |
2291 | D3-O20-011 | Dec. 20 | 17:10 | 17:25 | *M | 越智 雅明 Masaaki OCHI |
大阪府立大学 Osaka Prefecture University |
イオン照射と熱処理によるNiTi金属間化合物の構造及び硬度変化 Change in lattice structure and hardness of NiTi intermetallic compound induced by energetic ion irradiation and thermal annealing |
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2788 | D3-O20-012 | Dec. 20 | 17:25 | 17:40 | *M | 上野 陽平 Yohei UENO |
大阪府立大学大学院工学研究科 Graduate school of Engineering, Osaka Prefecture University |
B2型FeAl規則合金におけるH+照射後の水素トラップ挙動 Hydrogen trapping behavior in B2 ordered Fe-Al alloys after H+ irraditation |
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Dec. 21 11:40 - 16:20 産業貿易センタービル 302室 / INDUSTRY & TRADE CENTER , Room 302 |
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Discussion with invited speakers and organizers | Dec. 21 | 11:40 | 13:10 | ||||||
Break | Dec. 21 | 13:10 | 14:00 | ||||||
Chair : Stefan FLEGE (TU Darmstadt, Germany) |
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2603 | Invited | D3-I21-001 | Dec. 21 | 14:00 | 14:30 | 清水 康雄 Yasuo SHIMIZU |
東北大学金属材料研究所 Institute for Materials Research, Tohoku University |
半導体・酸化物材料の3次元アトムプローブ分析 Atom Probe Tomography of Semiconductor and Oxide Materials |
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2772 | D3-O21-002 | Dec. 21 | 14:30 | 14:45 | *M | 西村 知紗 Chikasa NISHIMURA |
京都大学大学院工学研究科 Graduate school of Engineering, Kyoto University |
画像処理によるアルゴンを用いた電界イオン顕微鏡像の鮮明化 A Whole and Clear image processing of Ar-Field Ion Microscope image |
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2017 | Invited | D3-I21-003 | Dec. 21 | 14:45 | 15:15 | 神田 一浩 Kazuhiro KANDA |
兵庫県立大学高度産業科学技術研究所 Laboratory of Advanced Science and Technology for Industry, University of Hyogo |
X線吸収分光によるアモルファス炭素膜の評価 Evaluation of amourphous carbon film by X-ray absorption spectroscopy |
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2793 | D3-O21-004 | Dec. 21 | 15:15 | 15:30 | 西川 宏之 Hiroyuki NISHIKAWA |
芝浦工業大学工学部電気工学科/芝浦工業大学SIT総合研究所 Dept. of Electrical Engineeirng, Shibaura Institute of Technology/SIT Research Laboratories, Shibaura Institute of Technology |
陽子線描画によるセンサ応用のためのポリフッ化ビニリデンフィルム加工 Proton Beam Writing on PolyVinilydene DiFluoride Films for Sensor Applications |
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Chair : 西川 宏之(芝浦工業大学) Hiroyuki NISHIKAWA (Shibaura Inst. of Tech.) |
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2359 | Invited | D3-I21-005 | Dec. 21 | 15:30 | 16:00 | Stefan FLEGE | Technische Universitaet Darmstadt | Use of nanoparticles as a metal source in plasma processes | |
2003 | D3-O21-006 | Dec. 21 | 16:00 | 16:15 | 中尾 節男 Setsuo NAKAO |
産総研中部 AIST-Chubu |
プラズマ利用イオン注入およびスパッタ法を用いたTi-B-N膜の作製 Preparation of Ti-B-N films by plasma based ion implantation with sputtering methods |
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Closing | Dec. 21 | 16:15 | 16:20 | S. NAKAO (AIST-Chubu) |