D-3 : Interface Characterization |
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Entry No | Keynote/ Invited |
Presentation | Date | Time to start |
Time to finish |
Award | Presenter Name | Affiliation | Paper Title |
Dec. 9 9:30 - 17:10 万国橋会議センター/Room A Bankokubashi Kaigi Center/ Room A |
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Opening | Dec. 9 | 09:30 | 09:40 | シンポジウム提案者 物質・材料研究機構 山下良之 | |||||
Chair : 長田貴弘 (物質・材料研究機構) Takahiro NAGATA (NIMS) |
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2080 | Invited | D3-I9-001 | Dec. 9 | 09:40 | 10:10 | *G | Takashi TSUCHIYA | Tokyo university of science | Observation of Redox Behavior in Nanoionics Devices Using X-ray Photoemission Spectroscopy |
2084 | D3-O9-002 | Dec. 9 | 10:10 | 10:30 | Yoshiyuki YAMASHITA | National Institute for Materials Science | Bias Dependent Potential of High-k thin films obtained from Operando Photoelectron Spectroscopy | ||
Break | Dec. 9 | 10:30 | 11:00 | ||||||
Chair : 山下良之 (物質・材料研究機構) Yoshiyuki YAMASHITA (NIMS) |
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2221 | Invited | D3-I9-003 | Dec. 9 | 11:00 | 11:40 | Takahiro NAGATA | National Institute for Materials Science | Hard X-ray Photoelectron Spectroscopic Study on High-k Dielectrics Based ReRAM Structure under Bias Operation | |
2902 | D3-O9-004 | Dec. 9 | 11:40 | 12:00 | *G | Hiromi TANAKA | National Institute of Technology, Yonago College | Mg Doping into Bi-2212 High Temperature Superconducting Whisker and its Characterization | |
Chair : 土屋 敬志(Takashi TSUCHIYA) 東京理科大学(Tokyo university of science) |
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2854 | Invited | D3-I9-005 | Dec. 9 | 13:00 | 13:40 | Hirokazu FUKIDOME | Tohoku University | Operando nanospectroscopy to designate high-performance graphene transistors | |
2126 | D3-O9-006 | Dec. 9 | 13:40 | 14:00 | Yoshiyuki YAMASHITA | National Institute for Materials Science | Interface States at Ultrathin-oxide/Si Interface Obtained from Operando Photoelectron Spectroscopy | ||
2303 | D3-O9-007 | Dec. 9 | 14:00 | 14:20 | *M | Yoshihisa SUZUKI | Meiji University/National Institute for Materials Science | Interface Ge diffusion effect on epitaxial growth of rutile type TiO2 on (100) Ge substrate | |
2915 | Invited | D3-I9-008 | Dec. 9 | 14:20 | 14:50 | Shogo MIYOSHI | Graduate School of Engineering, The University of Tokyo | Surface Chemical State of (La,Sr)CoO3-based Oxides for Cathode of Solid Oxide Fuel Cells | |
Break | Dec. 9 | 14:50 | 15:10 | ||||||
Chair : 山下良之 (物質・材料研究機構) Yoshiyuki YAMASHITA (NIMS) |
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2922 | Invited | D3-I9-009 | Dec. 9 | 15:10 | 15:40 | *G | Tomohiro YAMAGUCHI | Kogakuin University | Epitaxial growth of GaInN by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy |
2073 | D3-O9-010 | Dec. 9 | 15:40 | 16:00 | *G | Tsuneaki SAKURAI | Graduate School of Engineering, Kyoto University/Graduate School of Engineering, Osaka University | Development of Evaluation Technique of Charge Carrier Transporting Property at Insulator-Semiconductor Interfaces | |
2861 | Invited | D3-I9-011 | Dec. 9 | 16:00 | 16:30 | Takao ISHIDA | AIST | Thermoelectric Property of Ordered PEDOT:PSS Films and its TE Module Fabrication | |
2588 | D3-O9-012 | Dec. 9 | 16:30 | 16:50 | *G | Huaping SONG | College of Science and Technology, Nihon University/Research Institute, Kochi University of Technology | Investigation on the Indium Codoping Effects in the Humidity Stability of Ga-doped ZnO Films | |
2609 | D3-O9-013 | Dec. 9 | 16:50 | 17:10 | *G | Dominic GERLACH | National Institute for Materials Science, Tsukuba, Ibaraki/Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin | Metallization of the buried Si / SnO:F interface as revealed by hard x-rays |